? semiconductor components industries, llc, 2000 december, 2000 ? rev. 0 1 publication order number: ncr169d/d
reverse blocking thyristor pnpn device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. supplied in a cost effective plastic to-92 package. ? sensitive gate allows direct triggering by microcontrollers and other logic circuits ? on?state current rating of 0 . 8 amperes rms at 80 c ? surge current capability ? 10 amperes ? immunity to dv/dt ? 20 v/ sec minimum at 110 c ? glass-passivated surface for reliability and uniformity ? blocking voltage to 600 volts maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (note 1.) (t j = 40 to 110 c, sine wave, 50 to 60 hz; gate open) v drm, v rrm 6 00 v olts on-state rms current (t c = 80 c) 180 conduction angles i t(rms) 0 . 8 a mp peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 25 c) i tsm 1 0 a mps circuit fusing consideration (t = 10 ms) i 2 t 0.415 a 2 s forward peak gate power (t a = 25 c, pulse width 1.0 s) p gm 0.1 watt forward average gate power (t a = 25 c, t = 20 ms) p g(av) 0. 1 0 w att forward peak gate current (t a = 25 c, pulse width 1.0 s) i gm 1. 0 amp reverse peak gate voltage (t a = 25 c, pulse width 1.0 s) v grm 5.0 volts operating junction temperature range @ rate v rrm and v drm t j ?40 to 110 c storage temperature range t stg ?40 to 150 c scr 0 . 8 amperes rms 6 00 volts 4 (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. a stc CR03AM to?92 (to?226) case 029 style 10 3 2 1 pin assignment 1 2 3 anode gate cathode k g a
CR03AM 2 thermal characteristics characteristic symbol max unit thermal resistance ? junction to case ? junction to ambient r jc r ja 75 200 c/w lead solder temperature ( 1/16 from case, 10 secs max) t l 260 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (note 1.) t c = 25 c (v d = rated v drm and v rrm ; r gk = 1.0 k )t c = 110 c i drm , i rrm ? ? ? ? 10 0.1 a ma on characteristics peak forward on?state voltage (*) (i tm = 1.0 amp peak @ t a = 25 c) v tm ? ? 1.7 volts gate tri gger current (continuous dc) (note 2.) t c = 25 c (v ak = 12 v, r l = 100 ohms) i gt ? 6 8 a holding current (note 2.) t c = 25 c (v ak = 12 v, i gt = 0.5 ma) t c = ?40 c i h ? ? 0.5 ? 5.0 10 ma latch current t c = 25 c (v ak = 12 v, i gt = 0.5 ma, r gk = 1.0 k) t c = ?40 c i l ? ? 0.6 ? 10 15 ma gate tri gger v oltage (continuous dc) (note 2.) t c = 25 c (v ak = 12 v, r l = 100 ohms, i gt = 10 ma) t c = ?40 c v gt ? ? 0.62 ? 0.8 1.2 volts dynamic characteristics critical rate of rise of off?state voltage (v d = rated v drm , exponential waveform, r gk = 1000 ohms, t j = 110 c) dv/dt 20 35 ? v/ s critical rate of rise of on?state current (i pk = 20 a; pw = 10 sec; dig/dt = 1.0 a/ sec, igt = 20 ma) di/dt ? ? 50 a/ s *indicates pulse test: pulse width 1.0 ms, duty cycle 1%. 1. r gk = 1000 ohms included in measurement. 2. does not include r gk in measurement.
CR03AM 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) 100 90 80 70 60 50 40 30 110 50 35 20 5 ?10 ?25 ?40
figure 2. typical gate trigger voltage versus junction temperature t j , junction temperature ( c) 110 65 50 35 20 5 ?10 ?25 ?40 0.8 0.7 0.6 0.5 0.4 0.3
0.2 20 10 0.9 1.0 95 80 65 95 80
CR03AM 4 dc figure 3. typical holding current versus junction temperature t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 ?10 ?25 ?40
figure 4. typical latching current versus junction temperature 10 figure 5. typical rms current derating i t(rms) , rms on-state current (amps) 120 110 100 90 80 70 60 50 0.5 0.4 0.3 0.2 0.1 0 figure 6. typical on?state characteristics v t , instantaneous on-state voltage (volts) 3.5 3.2 2.3 2.0 1.7 1.4 1.1 0.8 0.5 1
0.1 40 10 95 80 t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 ?10 ?25 ?40
10 95 80 30 60 90 120 180 2.9 2.6 maximum @ t j = 110 c maximum @ t j = 25 c
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